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  Datasheet File OCR Text:
 A1015
PNP General Purpose Transistors
P b Lead(Pb)-Free
TO-92
1. EMITTER 2. COLLECTOR 3. BASE
1
2
3
MAXIMUM RATINGS* (TA=25C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation TA=25C
Junction Temperature Storage Temperature
Symbol
VCEO VCBO VEBO IC PD TJ TSTG
Value
-50 -50 -5.0 -150 0.4 +150 -55 to + 150
Unit
V V V mA W C C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage, IC = -100A, IE = 0 Collector-Emitter Breakdown Voltage, IC = -0.1mA, IB = 0 Emitter-Base Breakdown Voltage, IE = -100A, IC = 0 Collector Cut-off Current, VCB = -50V, IE = 0 Collector Cut-off Current, VCE = -50V, IB = 0 Emitter Cut-off Current, VEB = -5.0V, IC = 0 V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO -50 -50 -5.0 -0.1 -0.1 -0.1
V V V A A A
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A1015
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain VCE =-6.0V, I C =-2.0mA Collector-Emitter Saturation Voltage IC=-100mA, IB =-10mA Base-Emitter Voltage IC=-100mA, IB =-10mA TransitionFrequence VCE = -10V, IC = -1mA, f = 30MHz Collector Output Capacitance VCB = -10V, IE = 0, f = 1MHz Noise Figure VCE = -6V, I C = -0.1mA, Rg = 10k, f = 1KMHz hFE1 VCE(sat) VBE(sat) fT Cob NF 70 400 -0.3 -1.1 6 -
19 -
V V MHz pF dB
80 -
CLASSIFICATION OF hFE1 Rank Range O 70-140 Y 120-240 GR 200-400
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A1015
Typical Characteristics
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A1015
TO-92 Outline Dimensions
E
unit:mm
C
J K
G
Dim A B C D E G H J K L
H
TO-92
Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50
B
L
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D
A
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14-Feb-06


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